Room temperature grown zirconia/SiO/sub 2/ dielectric stacks with 1 nm EOT

Author

Ramanathan, S. ; McIntyre, P.C.

Author_Institution

Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA

fYear

2002

fDate

24-26 June 2002

Firstpage

101

Lastpage

102

Abstract

Metal-oxide films such as zirconia and hafnia are currently being investigated to replace silicon dioxide as the gate dielectric material in future CMOS devices. It is important to develop processing science to grow these dielectric films of high electrical quality. Previously, we have grown zirconia films by ultraviolet ozone oxidation (UVO) on chemical oxide with electrical thickness ranging from 1.6 - 2.0 nm. In this study, the UVO method has been used to grow both ultra-thin zirconia films and sub-nanometer thick SiO/sub 2/ films at room temperature.

Keywords

CMOS integrated circuits; dielectric thin films; oxidation; semiconductor device measurement; silicon compounds; zirconium compounds; 1 nm; CMOS applications; O/sub 3/; SiO/sub 2/; UVO method; ZrO/sub 2/; ZrO/sub 2//SiO/sub 2/ room temperature grown dielectric stacks; dielectric thin film growth; equivalent oxide thickness; film electrical thickness; hafnia; metal-oxide films; silicon dioxide gate dielectric material; ultraviolet ozone oxidation; zirconia; Dielectric films; Dielectric thin films; Leakage current; Materials science and technology; Oxidation; Semiconductor films; Silicon; Stress; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2002. 60th DRC. Conference Digest

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-7317-0

Type

conf

DOI

10.1109/DRC.2002.1029535

Filename

1029535