Microscopic theory of nonequilibrium effects in semiconductor laser structures

A quantitative analysis of carrier and LO phonon scattering is presented. For quantification of scattering, effective times for carrier-carrier and carrier-phonon scattering are extracted from a microscopic calculation for different structures. A large variance is observed depending on the material parameters, sometimes providing counter-examples to popularly established approximations used e.g. in laser simulations. Microscopically calculated times may be used for parameter studies in a nonequilibrium laser model.