• DocumentCode
    2189085
  • Title

    Graph-based quantum integrated circuits using III-V mulch-branch nanowire networks and their nano-Schottky gate control

  • Author

    Kasai, S. ; Yumoto, M. ; Fukushi, T. ; Muranaka, T. ; Hasegawa, H.

  • Author_Institution
    Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan
  • fYear
    2002
  • fDate
    24-26 June 2002
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    Beyond the scaling limit of Si CMOS LSls, one envisages nanoelectronics based on quantum devices. To realize quantum LSls (Q-LSIs), however, a novel architecture is required that is suitable to non-robust and charge-sensitive quantum devices which manipulate a single or a few electrons. The cascaded logic gate architecture in Si LSIs is utterly unsuitable. The purpose of this paper is to propose a graph-based Q-LSI architecture and to investigate its basic feasibility by forming of high-density GaAs-based and InP-based multi-branch nanowire networks and controlling them by nanometer-scale Schottky gates.
  • Keywords
    III-V semiconductors; Schottky barriers; gallium arsenide; graph theory; indium compounds; large scale integration; nanoelectronics; quantum gates; GaAs; III-V multi-branch nanowire network; InP; graph-based quantum integrated circuit; logic gate; nano-Schottky gate control; nanoelectronics; quantum LSI architecture; quantum device; Chemicals; Data structures; Electrons; Etching; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Logic functions; Nanoscale devices; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2002. 60th DRC. Conference Digest
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-7317-0
  • Type

    conf

  • DOI
    10.1109/DRC.2002.1029536
  • Filename
    1029536