DocumentCode
2189157
Title
Si/SiGe MMIC technology
Author
Luy, J.-F. ; Strohm, K.M. ; Sasse, E.
Author_Institution
Res. Center, Daimler-Benz AG, Ulm, Germany
fYear
1994
fDate
23-27 May 1994
Firstpage
1755
Abstract
This contribution gives an overview on the state of the art of Si/SiGe MMIC technology. IMPATT diodes for transmitters, Schottky diodes for mixers and PIN diodes for switches at W-band frequencies and SiGe-HBTs for oscillators at Ka-band frequencies are integrated on high resistivity silicon substrate.<>
Keywords
Ge-Si alloys; IMPATT diodes; MMIC; Schottky-barrier diodes; bipolar integrated circuits; elemental semiconductors; heterojunction bipolar transistors; integrated circuit technology; microwave oscillators; mixers (circuits); p-i-n diodes; semiconductor materials; semiconductor switches; silicon; EHF; HBT; IMPATT diodes; Ka-band frequencies; MIMIC; MM-wave IC; MMIC technology; PIN diodes; SHF; Schottky diodes; Si-SiGe; W-band frequencies; high resistivity Si substrate; mixers; oscillators; switches; transmitters; Conductivity; Frequency; Germanium silicon alloys; MMICs; Oscillators; Schottky diodes; Silicon germanium; Switches; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335102
Filename
335102
Link To Document