3d simulations of DEPFET based sensors: algorithms and results

Author

Gartner, Klaus

Author_Institution

Weierstrass Inst. for Appl. Anal. & Stochastics, Berlin, Germany

fYear

2005

fDate

19-22 Sept. 2005

Firstpage

39

Lastpage

40

Abstract

A code (N.N.) written to study algorithms was applied to improve DEPleted Field Effect Transistor (J. Kemmer, et al., 1987) based sensors in a joint effort with R. Richter (HLL of the MPI for Physics in Munich and the MPI for Extra-Terrestrial Physics in Garching). DEPFET X-ray sensors show significant 3d effects and have to fulfill a lot of requirements (good amplification, very low losses of the generated electrons, low power and noise, time constraints). Simulation has increased the understanding and changed the design and the applied process technology.

Keywords

X-ray detection; X-ray optics; digital simulation; field effect transistors; photodetectors; 3d effects; DEPFET X-ray sensors; DEPFET based sensors 3d simulations; algorithms; depleted field effect transistor based sensors; digital simulation; Algorithm design and analysis; Clouds; Electrons; FETs; Isosurfaces; Noise generators; Physics; Power generation; Stochastic processes; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-9149-7

Type

conf

DOI

10.1109/NUSOD.2005.1518124

Filename

1518124