Title :
3d simulations of DEPFET based sensors: algorithms and results
Author_Institution :
Weierstrass Inst. for Appl. Anal. & Stochastics, Berlin, Germany
Abstract :
A code (N.N.) written to study algorithms was applied to improve DEPleted Field Effect Transistor (J. Kemmer, et al., 1987) based sensors in a joint effort with R. Richter (HLL of the MPI for Physics in Munich and the MPI for Extra-Terrestrial Physics in Garching). DEPFET X-ray sensors show significant 3d effects and have to fulfill a lot of requirements (good amplification, very low losses of the generated electrons, low power and noise, time constraints). Simulation has increased the understanding and changed the design and the applied process technology.
Keywords :
X-ray detection; X-ray optics; digital simulation; field effect transistors; photodetectors; 3d effects; DEPFET X-ray sensors; DEPFET based sensors 3d simulations; algorithms; depleted field effect transistor based sensors; digital simulation; Algorithm design and analysis; Clouds; Electrons; FETs; Isosurfaces; Noise generators; Physics; Power generation; Stochastic processes; Time factors;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-9149-7
DOI :
10.1109/NUSOD.2005.1518124
