Mixed device/circuit model of the high-speed p-i-n photodiode

Author

Malyshev, S.A. ; Chizh, A.L. ; Vasileuski, Y.G.

Author_Institution

Inst. of Electron., Nat. Acad. of Sci., Minsk, Belarus

fYear

2005

fDate

19-22 Sept. 2005

Firstpage

45

Lastpage

46

Abstract

The mixed device/circuit model of the p-i-n photodiode based on 2-D drift-diffusion scheme of charge carrier transport in semiconductor heterostructures and piecewise harmonic balance method is developed. The model takes into account Fermi statistic, thermionic emission and tunneling at the hetero-interfaces and is suitable to simulate p-i-n photodiode with axial symmetry both in time and frequency domains.

Keywords

Poisson equation; p-i-n photodiodes; semiconductor device models; semiconductor heterojunctions; statistics; thermionic emission; tunnelling; 2-D drift-diffusion; Fermi statistics; charge carrier transport; hetero-interface; high-speed p-i-n photodiode; mixed device-circuit model; piecewise harmonic balance method; semiconductor heterostructure; thermionic emission; tunneling; Charge carrier processes; Circuit simulation; Electron mobility; Frequency conversion; Frequency domain analysis; Microwave devices; Optimized production technology; PIN photodiodes; Radiative recombination; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-9149-7

Type

conf

DOI

10.1109/NUSOD.2005.1518127

Filename

1518127