Title :
Injection dependence of spontaneous radiative recombination in c-Si: experiment, theoretical analysis, and simulation
Author :
Altermatt, P.P. ; Geelhaar, F. ; Trupke, T. ; Dai, X. ; Neisser, A. ; Daub, E.
Author_Institution :
Dept. Solar Energy Res., Inst. for Solid-State Phys., Hannover, Germany
Abstract :
The radiative recombination coefficient B in crystalline bulk silicon is enhanced by the Coulomb attraction between electrons and holes. This effect and hence B - is reduced at high carrier densities due to screening. We measure and numerically calculate B as a function of injection density, and with the gained model we simulate an experiment in order to extract the Coulomb-enhancement of Auger recombination.
Keywords :
Auger effect; carrier density; electron-hole recombination; elemental semiconductors; numerical analysis; silicon; Auger recombination; Coulomb attraction; Coulomb-enhancement; Si; carrier density; crystalline bulk silicon; electrons; holes; injection density; spontaneous radiative recombination coefficient; Analytical models; Charge carrier density; Charge carrier processes; Crystallization; Current measurement; Density measurement; Gain measurement; Radiative recombination; Silicon; Spontaneous emission;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-9149-7
DOI :
10.1109/NUSOD.2005.1518128
