An L-band power amplifier multi-chip-module using multi-layered planar circuits

Author

Ida, M. ; Suzaki, H. ; Yamanaka, T. ; Nishikawa, T.

Author_Institution

Murata Manuf. Co. Ltd., Yokohama, Japan

fYear

1994

fDate

23-27 May 1994

Firstpage

1649

Abstract

A power amplifier Multi-Chip-Module (MCM) was developed for an L-band digital cordless telephone. To realize both the high power added efficiency and small outline, MMIC design in the MCM is combined with design of a multi-layered planar circuit. The maximum gain of 37.1 dB and output power of 25.6 dBm are obtained at 1.9 GHz. Maximum total power added efficiency is 25% at 2.0 GHz. A power added efficiency of a final stage power FET is estimated at 36%. An outline of 8.0/spl times/6.2/spl times/1.9 mm/sup 3/ is comparable with MMICs.<>

Keywords

MMIC; cellular radio; cordless telephone systems; field effect integrated circuits; microwave amplifiers; mobile radio systems; multichip modules; power amplifiers; ultra-high-frequency amplifiers; 1.9 GHz; 25 to 36 percent; 37.1 dB; L-band; MMIC design; UHF; digital cordless telephone; final stage power FET; multi-chip-module; multi-layered planar circuits; output power; power added efficiency; power amplifier; small outline; Circuits; FETs; Gain; L-band; MMICs; Power amplifiers; Power generation; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335125

Filename

335125