A monolithic 250 GHz Schottky-diode receiver

Author

Gearhart, S.S. ; Rebeiz, G.M.

Author_Institution

NASA/Center for Space Terahertz Technol., Electr. Eng. & Computer Sci. Dept., Michigan Univ., Ann Arbor, MI, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

1333

Abstract

A 250 GHz monolithic Schottky-diode receiver based on a double-slot antenna is presented. The double-slot antenna is placed on an extended hemispherical high-resistivity silicon substrate lens. The measured DSB conversion loss and noise temperature at 258 GHz are 9.0/spl plusmn/0.3 dB and 2000/spl plusmn/100 K for the antenna/mixer, respectively. The measured results are expected to be about 2 dB better with more LO power and a matching cap layer. The uniplanar double-slot antenna receiver is less than 0.3/spl times/1 mm in size including the IF filter and represents the first fully monolithic 250 GHz receiver to date.<>

Keywords

MMIC; Schottky-barrier diodes; gallium arsenide; microwave integrated circuits; radio receivers; silicon; slot antennas; 250 to 258 GHz; 9 dB; DSB conversion loss; EHF; GaAs; MM-wave monolithic receiver; Schottky-diode receiver; Si; double-slot antenna; high-resistivity Si substrate lens; noise temperature; uniplanar type; Antenna measurements; Filters; Lenses; Loss measurement; Noise measurement; Power measurement; Receiving antennas; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335130

Filename

335130