Title :
Comparison of k.p models for quantum well optoelectronic devices
Author :
Mensz, P.M. ; Li, Z.S.
Author_Institution :
Crosslight Software Inc., Burnaby, BC, Canada
Abstract :
The objective of this study is to establish quantitatively the applicability of different k.p models for zincblende quantum wells. A well known material system of GaAs/AlGaAs QW was used for benchmarking purpose here. The axial approximation in 4×4 and 6×6 is clear winner in terms of accuracy/computational time, while the full angle average model of 8×8 should be reserved for benchmarking purpose.
Keywords :
k.p calculations; optoelectronic devices; quantum well devices; semiconductor quantum wells; zinc compounds; GaAs-AlGaAs; benchmarking purpose; k.p model; material system; quantum well optoelectronic devices; zincblende quantum wells; Effective mass; Finite difference methods; Gallium arsenide; Numerical models; Optical computing; Optical devices; Optical mixing; Optoelectronic devices; Partial differential equations; Wave functions;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-9149-7
DOI :
10.1109/NUSOD.2005.1518142
