A low cost DBS low noise block downconverter with a DR stabilized MESFET self-oscillating mixer

Author

Guan-Wu Wang ; Terng-Jie Lin ; Wen-Chung Liu ; Shu-Yuan Yang

Author_Institution

Comtex Microwave Corp., Hsinchu, Taiwan

fYear

1994

fDate

23-27 May 1994

Firstpage

1447

Abstract

We have developed a new X-band low noise block downconverter with a DR stabilized MESFET self-oscillating mixer (SOM) for DBS application. The SOM oscillation frequency is 9.75 GHz with a temperature stability of 1.8 ppmspl deg/C from -40/spl deg/C to 70/spl deg/C. The phase noise is measured to be -106 dBc/Hz at 100 KHz away from the carrier. The SOM provides a min. conversion gain of 4 dB and a max. SSB noise figure of 3.3 dB for RF signal from 10.7 GHz to 11.8 GHz. The downconverter, which consists of two stages of HEMT RF amplifier, bandpass filter, SOM, and IF amplifier, provides a max. noise figure of 1.2 dB and a min. conversion gain of 53 dB across the same RF frequency. This simple downconverter structure reduces component count and leads to lower cost and better yield.<>

Keywords

Schottky gate field effect transistors; direct broadcasting by satellite; frequency convertors; hybrid integrated circuits; microwave integrated circuits; mixers (circuits); -40 to 70 degC; 1.2 dB; 10.7 to 11.8 GHz; 3.3 dB; 4 dB; 53 dB; 9.75 GHz; DBS; DR stabilized MESFET; HEMT RF amplifier; SOM oscillation frequency; SSB noise figure; X-band; bandpass filter; block downconverter; conversion gain; phase noise; self-oscillating mixer; temperature stability; yield; Costs; Frequency; Gain; MESFETs; Mixers; Noise figure; Oscillators; Radiofrequency amplifiers; Satellite broadcasting; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335139

Filename

335139