Title :
Different designs for the optimization of monolithic ESBT(Emitter-Switched Bipolar Transistor)
Author :
Enea, V. ; Kroell, D. ; Messina, M. ; Ronsisvalle, C.
Author_Institution :
STMicroelectron., Catania
Abstract :
This study is aimed to improve the electrical performance (both on-resistance and current capability) of the novel power actuator by varying its horizontal geometry. As a matter of fact the topology of the elementary cell of ESBTreg has the peculiarity that the MOSFET cells are drawn inside the emitter fingers of the bjt side: this in order to achieve the monolithical solution of cascode connection between an high voltage bjt and a low voltage MOSFET. The object of this study is the one to discover which is the best trade-off between the perimeter of the emitter finger of the bjt part and the perimeter of the channel of the MOSFET part
Keywords :
power MOSFET; power bipolar transistors; power semiconductor switches; ESBTreg; MOSFET cells; current capability; horizontal geometry; monolithic emitter-switched bipolar transistor; power actuators; resistance capability; Bipolar transistors; Current density; Design optimization; Electron emission; Fingers; MOSFET circuits; Solid modeling;
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion, 2006. SPEEDAM 2006. International Symposium on
Conference_Location :
Taormina
Print_ISBN :
1-4244-0193-3
DOI :
10.1109/SPEEDAM.2006.1649783
