Different designs for the optimization of monolithic ESBT(Emitter-Switched Bipolar Transistor)

Author

Enea, V. ; Kroell, D. ; Messina, M. ; Ronsisvalle, C.

Author_Institution

STMicroelectron., Catania

fYear

2006

fDate

23-26 May 2006

Firstpage

271

Lastpage

274

Abstract

This study is aimed to improve the electrical performance (both on-resistance and current capability) of the novel power actuator by varying its horizontal geometry. As a matter of fact the topology of the elementary cell of ESBTreg has the peculiarity that the MOSFET cells are drawn inside the emitter fingers of the bjt side: this in order to achieve the monolithical solution of cascode connection between an high voltage bjt and a low voltage MOSFET. The object of this study is the one to discover which is the best trade-off between the perimeter of the emitter finger of the bjt part and the perimeter of the channel of the MOSFET part

Keywords

power MOSFET; power bipolar transistors; power semiconductor switches; ESBTreg; MOSFET cells; current capability; horizontal geometry; monolithic emitter-switched bipolar transistor; power actuators; resistance capability; Bipolar transistors; Current density; Design optimization; Electron emission; Fingers; MOSFET circuits; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics, Electrical Drives, Automation and Motion, 2006. SPEEDAM 2006. International Symposium on

Conference_Location

Taormina

Print_ISBN

1-4244-0193-3

Type

conf

DOI

10.1109/SPEEDAM.2006.1649783

Filename

1649783