Title :
Preparation and characterization of bulk nanoporous Sn and SnO2
Author :
Ahmad Shahar, Mohd Lutfi ; Rais, S.A.A. ; Wahid, M.H.A. ; Ahmad, M.F.
Author_Institution :
Sch. of Microelectron. Eng. (SoME), Univ. Malaysia Perlis (UniMAP), Arau, Malaysia
Abstract :
EUV lithography has received much attention because of leading the next generation lithography for more compact, with node size as small as 40nm integrated circuit (IC) fabrication process. Additional, the EUV lithography has been extensively researched around the world for semiconductor future road map. Bulk nanoporous of Sn and SnO2 become reliable candidate to generate EUV lithography. This paper is focused on preparation and characterization of bulk nanoporous material of Sn and SnO2 to overcome debris problem. The sample was prepared by reaction solid-state of powder Sn without organic binder and SnO2 with organic binder with compacting and sintering process. The samples are characterized by morphology identification (SEM) and phase identification (XRD). The result is proposed as prospect for future EUV lithography research to get solid low plasma density target.
Keywords :
X-ray diffraction; nanofabrication; nanolithography; nanoporous materials; plasma density; porous semiconductors; scanning electron microscopy; semiconductor growth; sintering; tin; tin compounds; ultraviolet lithography; EUV lithography; SEM; Sn; SnO2; XRD; integrated circuit fabrication process; morphology identification; nanoporous materials; next generation lithography; organic binder; phase identification; plasma density; powders; sintering process; size 40 nm; Bulk nanoporous; EUV lithography; Sn and SnO2;
Conference_Titel :
Research and Development (SCOReD), 2012 IEEE Student Conference on
Conference_Location :
Pulau Pinang
Print_ISBN :
978-1-4673-5158-4
DOI :
10.1109/SCOReD.2012.6518614
