Title :
Optimal noise matching of 0.25 micron gate GaAs MESFETs for low power personal communications receiver circuit designs
Author :
Scherrer, D. ; Apostolakis, P.J. ; Middleton, J. ; Kruse, J. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
0.25 /spl mu/m GaAs MESFETs are shown to be excellent device candidates for low current, low noise receiver circuits in personal communicators. The measured low current performance of ion-implanted 0.25 /spl mu/m gate FETs is reported for device gate widths of 100 /spl mu/m and 200 /spl mu/m and device bias conditions 0.5 V>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; field effect transistor circuits; gallium arsenide; personal communication networks; radio receivers; semiconductor device noise; solid-state microwave devices; 0.2 to 5 mA; 0.25 micron; 0.5 to 1.5 V; 0.69 dB; 100 micron; 12.4 dB; 2 GHz; 200 micron; GaAs; GaAs MESFETs; drain current; equivalent circuit models; gain; ion-implanted FETs; low current low noise receiver circuits; low power personal communications receiver circuit; noise figure; optimal noise matching; Circuit noise; Current measurement; Equivalent circuits; FETs; Gain; Gallium arsenide; MESFETs; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335141
