DocumentCode
2190121
Title
Influence of the device layout on the performance of 20A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology
Author
Vershinin, K. ; Sweet, M. ; Ngwendson, L. ; Narayanan, Sankara E M
Author_Institution
Emerging Technol. Res. Centre, De Montfort Univ., Leicester
fYear
2006
fDate
23-26 May 2006
Firstpage
275
Lastpage
278
Abstract
In this paper, the experimental performance of a 20 A 1.2 kV punch through CIGBT fabricated under manufacturing environment is presented for the first time. On state and switching performance of the device is analysed at room and elevated temperatures. Influence of the device layout in terms of number of the cathode cells per single cluster upon device performance is investigated experimentally
Keywords
cathodes; insulated gate bipolar transistors; integrated circuit manufacture; 1.2 kV; 20 A; cathode cells; clustered insulated gate bipolar transistor fabrication; device layout; punch through technology; Anodes; Cathodes; Conductivity; Insulated gate bipolar transistors; MOSFET circuits; Performance analysis; Pulp manufacturing; Temperature; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics, Electrical Drives, Automation and Motion, 2006. SPEEDAM 2006. International Symposium on
Conference_Location
Taormina
Print_ISBN
1-4244-0193-3
Type
conf
DOI
10.1109/SPEEDAM.2006.1649784
Filename
1649784
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