Title :
Influence of the device layout on the performance of 20A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology
Author :
Vershinin, K. ; Sweet, M. ; Ngwendson, L. ; Narayanan, Sankara E M
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester
Abstract :
In this paper, the experimental performance of a 20 A 1.2 kV punch through CIGBT fabricated under manufacturing environment is presented for the first time. On state and switching performance of the device is analysed at room and elevated temperatures. Influence of the device layout in terms of number of the cathode cells per single cluster upon device performance is investigated experimentally
Keywords :
cathodes; insulated gate bipolar transistors; integrated circuit manufacture; 1.2 kV; 20 A; cathode cells; clustered insulated gate bipolar transistor fabrication; device layout; punch through technology; Anodes; Cathodes; Conductivity; Insulated gate bipolar transistors; MOSFET circuits; Performance analysis; Pulp manufacturing; Temperature; Thyristors; Voltage;
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion, 2006. SPEEDAM 2006. International Symposium on
Conference_Location :
Taormina
Print_ISBN :
1-4244-0193-3
DOI :
10.1109/SPEEDAM.2006.1649784
