Numerical simulation of resonant interaction of SCWs with acoustic modes in n-GaAs thin film

Author

Garcia-B, Abel ; Grimalsky, Volodymir ; Gutierrez-D, Edmundo ; Durini, Daniel

Author_Institution

Electron. Dept., INAOE, Puebla, Mexico

fYear

2005

fDate

19-22 Sept. 2005

Firstpage

91

Lastpage

92

Abstract

We have investigated the resonant interaction of space charge waves (SCWs) with acoustic modes in GaAs films via deformation potential for first and second harmonic. The film has bias electric field and negative differential conductance phenomenon was use and also we used the quasi-hydrodynamic model. We have found to increase the frequency of excitation acoustic modes is possible with resonant interaction.

Keywords

acoustic microwave devices; acoustic wave amplification; acoustoelectric effects; gallium arsenide; semiconductor thin films; space charge waves; GaAs; deformation potential; electric field; excitation acoustic modes; film biasing; negative differential conductance phenomenon; numerical simulation; quasihydrodynamic model; semiconductor thin film; space charge wave parameteric amplification; space charge wave propagation; space charge wave resonant interaction; Acoustic devices; Acoustic waves; Conductive films; Electron mobility; Frequency; Gallium arsenide; Numerical simulation; Resonance; Space charge; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-9149-7

Type

conf

DOI

10.1109/NUSOD.2005.1518150

Filename

1518150