DocumentCode :
2190126
Title :
Numerical simulation of resonant interaction of SCWs with acoustic modes in n-GaAs thin film
Author :
Garcia-B, Abel ; Grimalsky, Volodymir ; Gutierrez-D, Edmundo ; Durini, Daniel
Author_Institution :
Electron. Dept., INAOE, Puebla, Mexico
fYear :
2005
fDate :
19-22 Sept. 2005
Firstpage :
91
Lastpage :
92
Abstract :
We have investigated the resonant interaction of space charge waves (SCWs) with acoustic modes in GaAs films via deformation potential for first and second harmonic. The film has bias electric field and negative differential conductance phenomenon was use and also we used the quasi-hydrodynamic model. We have found to increase the frequency of excitation acoustic modes is possible with resonant interaction.
Keywords :
acoustic microwave devices; acoustic wave amplification; acoustoelectric effects; gallium arsenide; semiconductor thin films; space charge waves; GaAs; deformation potential; electric field; excitation acoustic modes; film biasing; negative differential conductance phenomenon; numerical simulation; quasihydrodynamic model; semiconductor thin film; space charge wave parameteric amplification; space charge wave propagation; space charge wave resonant interaction; Acoustic devices; Acoustic waves; Conductive films; Electron mobility; Frequency; Gallium arsenide; Numerical simulation; Resonance; Space charge; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-9149-7
Type :
conf
DOI :
10.1109/NUSOD.2005.1518150
Filename :
1518150
Link To Document :
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