DocumentCode
2190313
Title
Modeling and simulation of a high sensitivity E-field sensor based on disk resonator and MOS structure in SOI technology
Author
Passaro, Vittorio M N ; De Leonardis, Francesco
Author_Institution
Dipt. di Elettrotecnica ed Elettronica, Politecino di Bari, Italy
fYear
2005
fDate
19-22 Sept. 2005
Firstpage
105
Lastpage
106
Abstract
A novel miniaturised high sensitivity Electric-field sensor based on a whispering gallery mode disk resonator is presented. This device joins the potentials of silicon-on-insulator (SOI) technology with the potentials of high Q-factor disk resonator.
Keywords
MIS devices; Q-factor; electro-optical devices; micro-optics; optical resonators; optical sensors; optoelectronic devices; silicon-on-insulator; whispering gallery modes; MOS structure; Q-factor disk resonator; SOI technology; miniaturised E-field sensor modeling; miniaturised E-field sensor simulation; whispering gallery mode disk resonator; Electromagnetic fields; Fabry-Perot; Interference; Optoelectronic and photonic sensors; Pulse measurements; Resonance; Sensor phenomena and characterization; Shape; Silicon on insulator technology; Waveguide components;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN
0-7803-9149-7
Type
conf
DOI
10.1109/NUSOD.2005.1518157
Filename
1518157
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