DocumentCode :
2190321
Title :
A silicon carbide self-aligned and ion implanted static induction transistor (SAI-SIT) for 150 watt S-Band operation
Author :
Knight, T.J. ; Clarke, R.C. ; Barron, R.R. ; Ostop, J.A. ; Morick, B.A. ; Gigante, J.R. ; Malkowski, W.J. ; Morse, A.W. ; DeSalvo, G.C. ; Petrosky, K.J. ; Curtice, W.R.
Author_Institution :
Northrop Grumman Corp, Baltimore, MD, USA
fYear :
2002
fDate :
24-26 June 2002
Firstpage :
179
Lastpage :
180
Abstract :
The Static Induction Transistor (SIT) has proven itself as an appropriate device to take full advantage of the high breakdown field strength, thermal conductivity, and electron velocity characteristics of silicon carbide. Microwave SITs using metal Schottky gates have been fabricated by several groups. For example, L-Band Schottky SITs with over 900 W of output power and 60% efficiency have been demonstrated. However, in order to achieve power gain at 3.0 GHz, more stringent geometric and alignment tolerances are required. At the same time, reaching 150 Watts at S-Band requires that the tight dimensional constraints be maintained across the expanse of large devices. A novel type of Static Induction Transistor fabricated in 4H-silicon carbide, described here for the first time, relies on self-aligned oxide isolation spacers between the source and an implanted gate.
Keywords :
ion implantation; microwave field effect transistors; microwave power transistors; power field effect transistors; silicon compounds; static induction transistors; wide band gap semiconductors; 150 W; 3.0 GHz; 4H-silicon carbide static induction transistor; S-band operation; SAI-SIT; SiC; ion implantation; metal Schottky gate; microwave SIT; power gain; self-aligned oxide isolation spacer; Contracts; Fingers; Microwave transistors; Nickel; Power transistors; Scanning electron microscopy; Silicides; Silicon carbide; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
Type :
conf
DOI :
10.1109/DRC.2002.1029586
Filename :
1029586
Link To Document :
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