Optical response of a pseudomorphic HFET photodetector up to 10 GHz

Author

Bangert, A. ; Rosenzweig, J. ; Ludwig, M. ; Bronner, W. ; Hofmann, P. ; Kohler, K.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1994

fDate

23-27 May 1994

Firstpage

1395

Abstract

For the first time, we present experimental results of the optical response of a pseudomorphic heterostructure field effect transistor (HFET) in the frequency range from 100 kHz up to 10 GHz. During the experiments we found a strong dependence of the slope of the optical response on the incident optical average power. The reason for this behavior is found to be the trap dependent amplification of the incident optical signals by the photoconductor formed by the buffer layer of the HFET.<>

Keywords

amplification; electron traps; field effect transistors; gallium arsenide; hole traps; photodetectors; solid-state microwave devices; 100 kHz to 10 GHz; GaAs; heterostructure field effect transistor; incident optical average power; optical response; photoconducting buffer layer; photodetector; pseudomorphic HFET; trap dependent amplification; Buffer layers; Charge carrier processes; Frequency; HEMTs; MODFETs; Optical buffering; Photoconductivity; Photodetectors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335150

Filename

335150