First diamond FET RF power measurement on diamond quasi-substrate

Diamond is an exceptional widegap material predestined for high power high frequency electronics. However, up to now devices could only be fabricated on chips cut from synthetic single crystal stones of small size, and device performance had been restricted to small signal measurements due to severe large signal instabilities However, diamond 100-oriented quasi-substrates of single crystal quality can be grown on ceramic substrates such as SrTiO/sub 3/ using a single crystal iridium buffer layer. In this experiment we have succeeded in fabricating the first surface channel FETs (using a hydrogen induced p-type channel) on such a diamond quasi-substrate. The FETs show high electrical stability, enabling large signal and power measurements for the first time, and thus demonstrating the feasibility of diamond microwave high power electronics.