DocumentCode
2190400
Title
Very high isolation optoelectronic switch using PIN-PD and GaAs MESFET transmission gate
Author
Liu, Q.Z. ; MacDonald, R.I.
Author_Institution
Telecommun. Res. Lab., Edmonton, Alta., Canada
fYear
1994
fDate
23-27 May 1994
Firstpage
1387
Abstract
A novel broadband optoelectronic switch is demonstrated experimentally with very high isolation. The switch consists of a switching PIN photodiode followed by a GaAs MESFET in common gate configuration as a transmission gate. Isolation level higher than 70.0 dB at DC and 55.0 dB at 1.0 GHz was obtained, respectively.<>
Keywords
gallium arsenide; integrated optoelectronics; optical switches; p-i-n photodiodes; semiconductor switches; 0 to 1 GHz; GaAs; GaAs MESFET transmission gate; broadband switch; common gate configuration; high isolation; optoelectronic switch; switching PIN photodiode; Gallium arsenide; MESFETs; PIN photodiodes; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335152
Filename
335152
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