DocumentCode
2190475
Title
Modeling of bidirectional regime in semiconductor ring lasers
Author
Passaro, Vittorio M N ; De Leonardis, Francesco
Author_Institution
Dipt. di Elettrotecnica ed Elettronica, Politecnico di Bari, Italy
fYear
2005
fDate
19-22 Sept. 2005
Firstpage
115
Lastpage
116
Abstract
A detailed modeling of semiconductor ring lasers is briefly reviewed and applied to the investigation of bidirectional regime. By a powerful model, a novel stability criterion has been derived to find the bidirectional regime of any semiconductor ring lasers, depending on the backscattering and any linear and non-linear effect in the active region.
Keywords
backscatter; laser stability; ring lasers; semiconductor lasers; backscattering; bidirectional regime; linear effect; nonlinear effect; semiconductor ring laser modeling; stability criterion; Backscatter; Difference equations; Differential equations; Laser modes; Laser theory; Maxwell equations; Quantum well devices; Ring lasers; Semiconductor lasers; Stability criteria;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2005. NUSOD '05. Proceedings of the 5th International Conference on
Print_ISBN
0-7803-9149-7
Type
conf
DOI
10.1109/NUSOD.2005.1518162
Filename
1518162
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