DocumentCode :
2190517
Title :
Extending the MESFET´s optical response to high frequencies
Author :
Hilu, M. ; Madjar, A. ; Barlev, A.
Author_Institution :
Technion-Israel Inst. of Technol., Haifa, Israel
fYear :
1994
fDate :
23-27 May 1994
Firstpage :
1121
Abstract :
The MESFET as an optical detector has been explored in recent years. The main disadvantage of that kind of detector is it´s poor response at high frequencies. This paper presents a method to improve the response at high frequencies by applying resonance techniques. Theoretical analysis as well as experimental results are presented to demonstrate the feasibility of the proposed method.<>
Keywords :
Schottky gate field effect transistors; photodetectors; phototransistors; MESFET; high frequency response; optical detector; photovoltaic response; resonance techniques; MESFETs; Optical detectors; Resonance; Resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1778-5
Type :
conf
DOI :
10.1109/MWSYM.1994.335157
Filename :
335157
Link To Document :
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