Title :
High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode
Author :
Rino Choi ; Onishi, K. ; Chang Scok Kang ; Renee Nieh ; Gopalan, S. ; Hag-ju Cho ; Krishnan, S. ; Lee, J.C.
Author_Institution :
The University of Texas at Austin
Abstract :
MOSFETs with high gate dielectric such as HfOz, ZrOz and LazOl have been studied intensively. Among these materials, HfOz seems to be promising because of its compatibility with the polysilicon gate process and relatively superior scalability.
Keywords :
Annealing; Dielectrics; Electrodes; Fabrication; Hafnium oxide; Hydrogen; Interface states; MOSFETs; Scattering; Temperature;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029596
