• DocumentCode
    2190569
  • Title

    High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode

  • Author

    Rino Choi ; Onishi, K. ; Chang Scok Kang ; Renee Nieh ; Gopalan, S. ; Hag-ju Cho ; Krishnan, S. ; Lee, J.C.

  • Author_Institution
    The University of Texas at Austin
  • fYear
    2002
  • fDate
    24-26 June 2002
  • Firstpage
    193
  • Lastpage
    194
  • Abstract
    MOSFETs with high gate dielectric such as HfOz, ZrOz and LazOl have been studied intensively. Among these materials, HfOz seems to be promising because of its compatibility with the polysilicon gate process and relatively superior scalability.
  • Keywords
    Annealing; Dielectrics; Electrodes; Fabrication; Hafnium oxide; Hydrogen; Interface states; MOSFETs; Scattering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2002. 60th DRC. Conference Digest
  • Conference_Location
    Santa Barbara, CA, USA
  • Print_ISBN
    0-7803-7317-0
  • Type

    conf

  • DOI
    10.1109/DRC.2002.1029596
  • Filename
    1029596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2190569