Title :
A CMOS signal processing circuit for silicon photodiode detectors
Author :
Chen, J.S. ; Chou, H.P. ; Hsu, C.I.
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The paper presents a low noise integrated amplifier used with silicon photodiodes for soft X-ray detection. The amplifier consists of a charge sensitive amplifier and a shaping amplifier designed for a detector capacitance of 30 pF. Both amplifier stages are based on folded cascode operational transconductance amplifier structure. The dimension of the front-end transistor is optimized for a low noise level. The amplifier has a peak voltage gain 255 mV/fC in the frequency of 1 MHz. The circuit is implemented using 0.35 μm CMOS IC technology. It is operated with single 3 volt power supply with a power consumption less than 520 μW. Sensitivity studies have been performed for manufacture uncertainties, operating temperature and supply voltage fluctuations.
Keywords :
X-ray detection; amplifiers; nuclear electronics; photodiodes; pulse shaping circuits; silicon radiation detectors; 0.35 micron; 1 MHz; 30 pF; 520 muW; CMOS signal processing circuit; Si; charge sensitive amplifier; front-end transistor; low noise integrated amplifier; operational transconductance amplifier structure; shaping amplifier; silicon photodiode detectors; soft X-ray detection; supply voltage fluctuations; CMOS process; CMOS technology; Circuits; Detectors; Low-noise amplifiers; Noise shaping; Operational amplifiers; Photodiodes; Signal processing; Silicon;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2002 IEEE
Print_ISBN :
0-7803-7636-6
DOI :
10.1109/NSSMIC.2002.1239286
