Title :
Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method
Author :
Gopalan, S. ; Choi, R. ; Onishi, K. ; Nieh, R. ; Kang, C.S. ; Cho, H.-J. ; Krishnan, S. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
The trade-offs between the benefits of NH/sub 3/ pre-treatment such as improved scalability, lower leakage and higher breakdown fields, and potential issues such as large hysteresis, degraded MOSFET characteristics and poorer reliability on Hf-silicate devices have been studied.
Keywords :
MOSFET; ammonia; dielectric hysteresis; dielectric thin films; hafnium compounds; leakage currents; oxidation; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; Hf(SiO/sub 3/)/sub 2/-Si; Hf-silicate devices; NH/sub 3/; NH/sub 3/ pre-treatment; breakdown fields; degraded MOSFET characteristics; electrical characteristics; hysteresis; leakage; re-oxidation method; reliability characteristics; ultra thin Hf(SiO/sub 3/)/sub 2/ films; Annealing; Atomic layer deposition; Capacitors; Degradation; Gate leakage; Hysteresis; Life estimation; Lifetime estimation; MOS devices; MOSFETs;
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-7317-0
DOI :
10.1109/DRC.2002.1029598
