Frequency performance of plasmawave devices for THZ applications and the role of fringing effects

Author

Khmyrova, Irina ; Nishimura, Takuya ; Magome, Nobuhiro ; Suemitsu, Tetsuya ; Otsuji, Taiichi

Author_Institution

Comput. Nanoelectron. Lab., Univ. of Aizu, Wakamatsu, Japan

fYear

2008

fDate

3-5 Dec. 2008

Firstpage

650

Lastpage

653

Abstract

Paper is focused on the model in which reduction of resonant frequency of plasma oscillations in the HEMT channel experimentally observed is associated with the gate contact fringing effects. Sheet electron density distribution in the fringed ungated channel region and expression for the resonant plasma frequency are obtained. Cascaded transmission line equivalent circuit model accounting for both gated and fringed ungated channel regions has been developed and used for simulation of HEMT frequency performance with IsSpice software.

Keywords

electron density; high electron mobility transistors; plasma density; plasma oscillations; submillimetre wave devices; terahertz wave devices; HEMT channel; IsSpice software; cascaded transmission line equivalent circuit model; gate contact fringing effects; high-electron mobility transistor-like structures; plasma oscillation resonant frequency; plasma wave devices; sheet electron density distribution; Distributed parameter circuits; Electrons; Equivalent circuits; HEMTs; Plasma applications; Plasma density; Plasma devices; Plasma simulation; Resonance; Resonant frequency; HEMT; Plasma oscillations; cascaded TL model; fringing effects; resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineers in Israel, 2008. IEEEI 2008. IEEE 25th Convention of

Conference_Location

Eilat

Print_ISBN

978-1-4244-2481-8

Electronic_ISBN

978-1-4244-2482-5

Type

conf

DOI

10.1109/EEEI.2008.4736613

Filename

4736613