Title :
HA2TSD: hierarchical time slack distribution for ultra-low power CMOS VLSI
Author :
Choi, Kyu-Won ; Chatterjee, Abhijit
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper describes an efficient hierarchical design and optimization approach for ultra-low power CMOS logic circuits. We introduce the Hierarchical Activity-Aware Time Slack Distribution (HA2TSD) algorithm, which distributes the surplus time slack into the most power-hungry modules hierarchically. HA2TSD ensures that the total slack budget is maximal and the total power is near-minimal. Based on these time slacks, we have optimized technology parameters (supply voltage, threshold voltage, and device width) through a gate-level power optimizer and have tested the algorithm on a set of benchmark example circuits and building blocks of a synthesizable ARM core. The experimental results show that our strategy delivers over an order of magnitude savings in total (static and dynamic) power and reduces the optimization run-time significantly.
Keywords :
CMOS logic circuits; VLSI; circuit optimisation; delays; integrated circuit design; logic CAD; logic partitioning; low-power electronics; device width; dynamic power; gate-level power optimizer; hierarchical activity-aware time slack distribution; hierarchical design; hierarchical optimization approach; maximal total slack budget; near-minimal total power; optimization run-time; power-hungry modules; static power; supply voltage; surplus time slack distribution; synthesizable ARM core; threshold voltage; topological depth-based partitioning; ultra-low power CMOS VLSI; ultra-low power CMOS logic circuits; Capacitance; Delay effects; Delay estimation; Equations; Integrated circuit interconnections; MOSFET circuits; Propagation delay; Semiconductor device modeling; Threshold voltage; Very large scale integration;
Conference_Titel :
Low Power Electronics and Design, 2002. ISLPED '02. Proceedings of the 2002 International Symposium on
Print_ISBN :
1-5811-3475-4
DOI :
10.1109/LPE.2002.146738