DocumentCode
2190966
Title
A preactivating mechanism for a VT-CMOS cache using address prediction
Author
Fujioka, Ryo ; Katayama, Kiyokazu ; Kobayashi, Ryotaro ; Ando, Hideki ; Shimada, Toshio
Author_Institution
Dept. of Inf. Electron., Nagoya Univ., Japan
fYear
2002
fDate
2002
Firstpage
247
Lastpage
250
Abstract
It has become an important requirement to achieve high performance and low-power consumption at the same time. The dynamic leakage cut-off (DLC) scheme, which controls transistors´ threshold voltage by the line on demand, is a technique that potentially satisfies that requirement for a cache. Yet, conventional DLC causes access time to significantly lengthen, and consequently processor performance is unacceptably degraded. This paper proposes a mechanism that suppresses the performance degradation by preactivating cache lines using address prediction before access requests. Our evaluation results show significant performance improvements are achieved with little increase of power consumption.
Keywords
CMOS memory circuits; cache storage; delay estimation; low-power electronics; microprocessor chips; performance evaluation; storage allocation; VT-CMOS cache; address prediction; cache line preactivating mechanism; dynamic leakage cut-off scheme; low-power consumption; onchip processor caches; performance improvement; threshold voltage control; variable-threshold CMOS cache; CMOS technology; Circuits; Degradation; Energy consumption; Leakage current; Permission; Process design; Random access memory; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design, 2002. ISLPED '02. Proceedings of the 2002 International Symposium on
Print_ISBN
1-5811-3475-4
Type
conf
DOI
10.1109/LPE.2002.146747
Filename
1029613
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