• DocumentCode
    2190966
  • Title

    A preactivating mechanism for a VT-CMOS cache using address prediction

  • Author

    Fujioka, Ryo ; Katayama, Kiyokazu ; Kobayashi, Ryotaro ; Ando, Hideki ; Shimada, Toshio

  • Author_Institution
    Dept. of Inf. Electron., Nagoya Univ., Japan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    247
  • Lastpage
    250
  • Abstract
    It has become an important requirement to achieve high performance and low-power consumption at the same time. The dynamic leakage cut-off (DLC) scheme, which controls transistors´ threshold voltage by the line on demand, is a technique that potentially satisfies that requirement for a cache. Yet, conventional DLC causes access time to significantly lengthen, and consequently processor performance is unacceptably degraded. This paper proposes a mechanism that suppresses the performance degradation by preactivating cache lines using address prediction before access requests. Our evaluation results show significant performance improvements are achieved with little increase of power consumption.
  • Keywords
    CMOS memory circuits; cache storage; delay estimation; low-power electronics; microprocessor chips; performance evaluation; storage allocation; VT-CMOS cache; address prediction; cache line preactivating mechanism; dynamic leakage cut-off scheme; low-power consumption; onchip processor caches; performance improvement; threshold voltage control; variable-threshold CMOS cache; CMOS technology; Circuits; Degradation; Energy consumption; Leakage current; Permission; Process design; Random access memory; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 2002. ISLPED '02. Proceedings of the 2002 International Symposium on
  • Print_ISBN
    1-5811-3475-4
  • Type

    conf

  • DOI
    10.1109/LPE.2002.146747
  • Filename
    1029613