Title :
High efficiency MOS-FET rectifier device
Author :
Shimada, Yuuki ; Kato, Kuniharu ; Sakai, Tatsuo
Author_Institution :
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
Abstract :
Two new Vertical DSA MOS-FETs were designed and tested. These devices both have a 13 milli-ohm RON and has a low transient loss, and a 2,300pF, a 2,i00pF Ciss, respectively. From circuit experiments, about 20% improvement is confirmed in the loss ratio.
Keywords :
Capacitance; Electrodes; Logic gates; Rectifiers; Resistance; Schottky diodes; Transient analysis;
Conference_Titel :
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location :
Albuquerque, New Mexico, USA
DOI :
10.1109/PESC.1983.7069849
