Title :
Device design tradeoffs for 55v ldmos driver embedded in 0.18 micron platform
Author :
Klein, Nathanaelle ; Levin, Sharon ; Fleishon, Gal ; Levy, Sagy ; Eyal, Alon ; Shapira, Shye
Author_Institution :
Tower Semicond., Migdal Ha´´Emek, Israel
Abstract :
We describe the optimization of a 55 V breakdown LDMOS embedded in a 0.18 micron based power management platform. The devices self aligned structure allow the accessing low RdsOn values of 50 mohm mm2. We focus on the effects of gate poly over STI overlap which can increase the breakdown voltage by 10 V and reduce maximum substrate current 5 fold while not affecting the specific RdsOn.
Keywords :
CMOS integrated circuits; driver circuits; electric breakdown; integrated circuit design; low-power electronics; Integrated power CMOS platforms; LDMOS driver; based power management platform; breakdown voltage; maximum substrate current; self aligned structure device; size 0.18 micron; voltage 55 V; Aluminum; Breakdown voltage; CMOS logic circuits; CMOS process; Energy management; Immune system; Implants; Logic devices; Metal-insulator structures; Poles and towers; Breakdown Voltage (BVDSS); Hot Carrier Injection (HCI); Lateral Diffused MOS (LDMOS); ON Resistance (RdsOn); TCAD;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 2008. IEEEI 2008. IEEE 25th Convention of
Conference_Location :
Eilat
Print_ISBN :
978-1-4244-2481-8
Electronic_ISBN :
978-1-4244-2482-5
DOI :
10.1109/EEEI.2008.4736631
