DocumentCode :
2191064
Title :
Investigation of power mosfet fbsoa using a non-destruct tester
Author :
Gauen, K. ; Pshaenich, A.
Author_Institution :
Motorola Semiconductor Products Sector, Phoenix, Arizona
fYear :
1983
fDate :
6-9 June 1983
Firstpage :
137
Lastpage :
143
Abstract :
This paper describes a nondestruct tester for measuring and verifying the FBSOA limits of power MOSFETs. Because the tester is nondestructive, an entire curve can be plotted with one transistor. Device trends thus become apparent and clues to failure mechanisms can sometimes be obtained. On a standard log-log plot, the curve usually describes a straight line with a slope slightly steeper than the -1 slope of constant power dissipation. Whether this phenomena is due to power dissipation or second breakdown is investigated.
Keywords :
Fixtures; Logic gates; MOSFET; Power supplies; Semiconductor optical amplifiers; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location :
Albuquerque, New Mexico, USA
ISSN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.1983.7069850
Filename :
7069850
Link To Document :
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