Title :
Investigation of power mosfet fbsoa using a non-destruct tester
Author :
Gauen, K. ; Pshaenich, A.
Author_Institution :
Motorola Semiconductor Products Sector, Phoenix, Arizona
Abstract :
This paper describes a nondestruct tester for measuring and verifying the FBSOA limits of power MOSFETs. Because the tester is nondestructive, an entire curve can be plotted with one transistor. Device trends thus become apparent and clues to failure mechanisms can sometimes be obtained. On a standard log-log plot, the curve usually describes a straight line with a slope slightly steeper than the -1 slope of constant power dissipation. Whether this phenomena is due to power dissipation or second breakdown is investigated.
Keywords :
Fixtures; Logic gates; MOSFET; Power supplies; Semiconductor optical amplifiers; Testing;
Conference_Titel :
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location :
Albuquerque, New Mexico, USA
DOI :
10.1109/PESC.1983.7069850