Title :
Design considerations for FET-gated power transistors
Author :
Chen, Dan ; Chin, Shaoan
Author_Institution :
Department of Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA
Abstract :
This paper deals with a recently proposed FET-Bipolar combinational power transistor con?? figuration. The feasibility of this configuration has been demonstrated using discrete devices. Design considerations are given to hybridize this configuration.
Keywords :
Bipolar transistors; Bonding; Field effect transistors; Materials; Power transistors; Surges;
Conference_Titel :
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location :
Albuquerque, New Mexico, USA
DOI :
10.1109/PESC.1983.7069851
