DocumentCode
2191152
Title
Failure and switching mechanisms in semiconductor P-N junction devices
Author
Vee, J. ; Orvis, W. ; Khanaka, G. ; Lair, D.
Author_Institution
Lawrence Livermore National Laboratory, Livermore, California 94550
fYear
1983
fDate
6-9 June 1983
Firstpage
154
Lastpage
159
Abstract
We use theoretical results obtained with computer models to interpret existing experimental data related to second breakdown mechanisms. We show that if you solve the complete set of transport equations for electrons, holes, and heat, you can model three kinds of second breakdown phenomena: current mode (CSB), thermal mode (TSB), and current?? thermal (CSB-TSB) mode second breakdown. We also discuss the effect of the input voltage pulse shape on the current switching time of a p-n junction device.
Keywords
Electric breakdown; Heating; Mathematical model; P-n junctions; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location
Albuquerque, New Mexico, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1983.7069853
Filename
7069853
Link To Document