DocumentCode
2191186
Title
New developments in improving the current carrying capability of power semiconductors
Author
Coulthard, Nigel ; Pezzani, Robert
Author_Institution
THOMSON - CSF Semiconductor Division, FRANCE
fYear
1983
fDate
6-9 June 1983
Firstpage
160
Lastpage
167
Abstract
A novel system for substantially increasing the current capability of high power semiconductors is presented. The basic silicon pellet unit is directly immersed in a liquid coolant (such as freon) ; the primary thermal exchange uses the latent heat of vaporisation of the liquid as it boils in close proximity to the pellet.
Keywords
Coolants; Copper; Films; Heating; Silicon; Surface finishing;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1983 IEEE
Conference_Location
Albuquerque, New Mexico, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1983.7069854
Filename
7069854
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