• DocumentCode
    2191280
  • Title

    IGBT gate drive circuit with in-built protection and immunity to transient fault

  • Author

    Majumdar, B. ; Mukherjee, Partha ; Talukdar, F.A. ; Biswas, S.K.

  • Author_Institution
    Dept. of Electr. Eng., Jadavpur Univ., Calcutta, India
  • Volume
    1
  • fYear
    2000
  • fDate
    19-22 Jan. 2000
  • Firstpage
    615
  • Abstract
    A new gate drive circuit for efficient switching of IGBTs has been presented in this paper. This circuit contains a short circuit protection scheme by limiting the IGBT fault current to a lower value through reduction of the IGBT gate voltage and thereby can distinguish a transient from an actual fault. Apart from the short circuit protection, the circuit also protects the IGBT in case of over-temperature. This circuit does not have any speed-up capacitor, differentiating element or latching element, thus giving good immunity towards unwanted noise. The oscillograms presented in this paper confirms satisfactory operation of this circuit.
  • Keywords
    driver circuits; insulated gate bipolar transistors; protection; short-circuit currents; switching circuits; transients; IGBT fault current limiting; IGBT gate drive circuit; IGBT gate voltage; in-built protection; oscillograms; over-temperature protection; short circuit protection; switching; transient fault immunity; unwanted noise immunity; Capacitors; Circuit faults; Fault currents; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Protection; Strontium; Switching circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Technology 2000. Proceedings of IEEE International Conference on
  • Print_ISBN
    0-7803-5812-0
  • Type

    conf

  • DOI
    10.1109/ICIT.2000.854239
  • Filename
    854239