DocumentCode :
2191280
Title :
IGBT gate drive circuit with in-built protection and immunity to transient fault
Author :
Majumdar, B. ; Mukherjee, Partha ; Talukdar, F.A. ; Biswas, S.K.
Author_Institution :
Dept. of Electr. Eng., Jadavpur Univ., Calcutta, India
Volume :
1
fYear :
2000
fDate :
19-22 Jan. 2000
Firstpage :
615
Abstract :
A new gate drive circuit for efficient switching of IGBTs has been presented in this paper. This circuit contains a short circuit protection scheme by limiting the IGBT fault current to a lower value through reduction of the IGBT gate voltage and thereby can distinguish a transient from an actual fault. Apart from the short circuit protection, the circuit also protects the IGBT in case of over-temperature. This circuit does not have any speed-up capacitor, differentiating element or latching element, thus giving good immunity towards unwanted noise. The oscillograms presented in this paper confirms satisfactory operation of this circuit.
Keywords :
driver circuits; insulated gate bipolar transistors; protection; short-circuit currents; switching circuits; transients; IGBT fault current limiting; IGBT gate drive circuit; IGBT gate voltage; in-built protection; oscillograms; over-temperature protection; short circuit protection; switching; transient fault immunity; unwanted noise immunity; Capacitors; Circuit faults; Fault currents; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Protection; Strontium; Switching circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Technology 2000. Proceedings of IEEE International Conference on
Print_ISBN :
0-7803-5812-0
Type :
conf
DOI :
10.1109/ICIT.2000.854239
Filename :
854239
Link To Document :
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