Title :
HEMT models for large signal circuit simulation
Author :
Halchin, D. ; Miller, M. ; Golio, M. ; Tehrani, S.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
Two new large signal HEMT models have been developed. The models have been implemented in both parameter extraction and circuit simulation software, and validated using an automated load-pull system. Both models show significant improvement in performance prediction capability compared to conventional models available in nonlinear simulation software. The validation procedure makes use of an InP based HEMT operating into both matched and un-matched load states at several power levels along with a uniquely defined nonlinear error metric.<>
Keywords :
circuit analysis computing; high electron mobility transistors; nonlinear network analysis; semiconductor device models; solid-state microwave devices; HEMT models; InP; InP based HEMT; automated load-pull system; circuit simulation software; large signal HEMT models; large signal circuit simulation; nonlinear simulation; parameter extraction software; performance prediction capability; validation procedure; Circuit simulation; HEMTs; Indium phosphide; Parameter extraction; Power system modeling; Predictive models; Software performance;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335191
