Large signal modelling of cryogenically cooled GaAs field effect transistors for low phase noise oscillator design

Author

Llopis, O. ; Verdier, J. ; Dienot, J.M. ; Andre, P. ; Plana, R. ; Graffeuil, J.

Author_Institution

CNRS, Univ. Paul Sabatier, Toulouse, France

fYear

1994

fDate

23-27 May 1994

Firstpage

981

Abstract

We present an extensive study of microwave FET nonlinear electrical properties at liquid nitrogen temperature. Pulsed measurement, together with low frequency noise measurements and S-parameters measurements, have been used to extract a large signal model of a previously selected HEMT device. This model is particularly dedicated to microwave low phase noise cryogenic oscillators design.<>

Keywords

III-V semiconductors; S-parameters; cryogenics; gallium arsenide; high electron mobility transistors; microwave oscillators; semiconductor device models; semiconductor device noise; solid-state microwave circuits; solid-state microwave devices; GaAs; HEMT device; S-parameters measurements; cryogenically cooled FET; large signal modelling; liquid nitrogen temperature; low frequency noise measurements; low phase noise oscillator design; microwave FET nonlinear electrical properties; pulsed measurement; Frequency measurement; Gallium arsenide; Low-frequency noise; Microwave FETs; Microwave devices; Nitrogen; Noise measurement; Pulse measurements; Scattering parameters; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335192

Filename

335192