Scale length determination of a fully depleted Surrounding gate (rectangular cross section) Junction Less Transistor

This paper presents a method for determination of scale length of fully depleted Surrounding gate (rectangular cross section) Junction Less Transistor. The scale length expression is obtained by solving the 3D Poisson´s equation. The variation of scale length with aspect ratio, gate oxide thickness and dielectric constant of gate dielectric is shown. It is seen that the scale length value increases with decreasing aspect ratio and is maximum for square cross section. The scale length value decreases with increasing dielectric constant and decreasing gate oxide thickness. The transverse and central potential profiles for different values of drain voltage, gate voltage, aspect ratio and gate oxide thickness are also shown.