DocumentCode
2191418
Title
A physics-based MESFET empirical model
Author
Pedro, J.C.
Author_Institution
Dept. de Electron. e Telecoms, Aveiro Univ., Portugal
fYear
1994
fDate
23-27 May 1994
Firstpage
973
Abstract
Although physics device models are recognized to provide interesting advantages over empirical expressions normally used in microwave simulation, little has been done by circuit designers, to exploit the concepts and knowledge gathered in that area. The present work is intended to review some simple conclusions drawn from MESFET physics behavior, and to show how they can be used in the development of a promising empirical nonlinear device model.<>
Keywords
Schottky gate field effect transistors; semiconductor device models; solid-state microwave devices; MESFET empirical model; microwave simulation; nonlinear device model; physics-based empirical model; Circuit simulation; MESFETs; Microwave circuits; Microwave devices; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335194
Filename
335194
Link To Document