Title :
Calculation of HEMT oscillator phase noise using large signal analysis in time domain
Author :
Olbrich, G.R. ; Felgentreff, T. ; Anzill, W. ; Hersina, G. ; Russer, P.
Author_Institution :
Lehrstuhl fur Hochfrequenztech., Tech. Univ. Munchen, Germany
Abstract :
A 15 GHz coplanar HEMT oscillator is analyzed in the time domain using a large signal transistor model for signal and noise analysis and phase noise calculation. The transistor model parameters in a wide bias range (200 bias points) are determined from DC, S-parameter and noise measurements, using cold and hot modelling techniques in combination with deembedding procedures. The model includes a low frequency f/sup a/ noise source. Results of phase noise measurements are compared with calculated data and agree within /spl plusmn/5 dB.<>
Keywords :
S-parameters; equivalent circuits; high electron mobility transistors; microwave integrated circuits; microwave oscillators; nonlinear network analysis; random noise; semiconductor device noise; time-domain analysis; 15 GHz; DC measurements; HEMT oscillator; S-parameter measurements; SHF; cold modelling techniques; coplanar HEMT oscillator; deembedding procedures; hot modelling techniques; large signal analysis; large signal transistor model; low frequency noise source; model parameters; noise measurements; phase noise; time domain analysis; Frequency; HEMTs; Low-frequency noise; Noise measurement; Oscillators; Phase measurement; Phase noise; Scattering parameters; Signal analysis; Time domain analysis;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335196
