DocumentCode :
2191578
Title :
X-band 50 W high stability Gunn pulsed sources
Author :
Zhen-Qi Huang ; Feng Wei
Author_Institution :
Nanjing Electron. Devices Inst., China
fYear :
1994
fDate :
23-27 May 1994
Firstpage :
949
Abstract :
A circuit structure readily adapted to combine the power of several pulsed diodes is presented. Herein the diodes have been mounted to stack up to a "Diodes Chain" in a full high WG. This approach does not suffer from multiple-modes, the diodes being in series along the same axis with the electric field. This method makes a feature of high active impedance, minor RF current, low loss and high Qex. As a result, high peak power and excellent frequency stability have been achieved. 50 W of peak power was measured from a two-diode pulsed Gunn source, the frequency stability being about 1-2 ppmspl deg/C and power\´s 0.01 dBspl deg/C for -20 to +60/spl deg/C. This may be one of the best performances published so far.<>
Keywords :
Gunn diodes; frequency stability; microwave generation; -20 to 60 C; 50 W; Diodes Chain; Qex; RF current; X-band; active impedance; circuit structure; frequency stability; loss; peak power; two-diode pulsed Gunn source; waveguide; Circuit stability; Diodes; Frequency measurement; Gunn devices; Impedance; Power measurement; Pulse circuits; Pulse measurements; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1778-5
Type :
conf
DOI :
10.1109/MWSYM.1994.335200
Filename :
335200
Link To Document :
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