Title :
Development of TiSiN diffusion barriers for Cu/SiLK metallization schemes
Author :
Sankaran, S. ; Harris, W. ; Nuesca, G. ; Shaffer, E.O. ; Hiartin, S.J. ; Geer, R.E.
Author_Institution :
Center for Adv. Thin Film Technol., State Univ. of New York, Albany, NY, USA
Abstract :
Diffusion barrier optimization and compatibility studies were undertaken with respect to the integration of Cu/TiSiN stacks on SiLK low-k dielectric films. First-pass testing optimized TiSiN film composition and evaluated process compatibility with SiLK. TiSiN/SiO2 stacks were used for baseline comparisons. Second-pass testing evaluated thermal stability of TiSiN/Cu/TiSiN/SiLK stacks against Cu diffusion and the stability of the TiSiN/SiLK interface. At temperatures up to 450°C no variations in stack composition or interfacial morphology were evidenced
Keywords :
copper; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; silicon compounds; titanium compounds; Cu-Si; Cu/SiLK metallization schemes; TiSiN; TiSiN diffusion barriers; compatibility; diffusion barrier optimization; interfacial morphology; stack composition; thermal stability; Argon; Chemical technology; Circuit stability; Copper; Dielectric materials; Metallization; Morphology; Temperature; Testing; Thermal stability;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854275
