Process integration of CVD Cu as a seed layer for Cu electroplating and a plug-fill application

Author

Park, Ki-Chul ; Choi, Seung-Man ; Lee, Sun-Jung ; Chang, Kyu-Hwan ; Lee, Hyeon-Deok ; Kang, Ho-Kyu ; Lee, Sang-In

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyounggi, South Korea

fYear

2000

fDate

2000

Firstpage

43

Lastpage

45

Abstract

CVD Cu film has been evaluated as a seed layer for Cu electroplating and a plug-fill application for back-end Cu metallization in 0.18 μm technologies. Excellent step coverage and via plug-fill with CVD Cu were routinely obtained. CVD Cu film showed the enhanced seed layer performance compared to an ionized PVD Cu seed layer. It was found that only 40 Å PVD Cu interlayer between the TaN and CVD Cu layer is enough to obtain low via contact resistance. The scheme of the CVD Cu seed formation followed by Cu electroplating showed approximately 20% lower via resistance as compared to that of the CVD Cu plug-fill followed by Cu electroplating

Keywords

CVD coatings; contact resistance; copper; electroplated coatings; integrated circuit interconnections; integrated circuit metallisation; metallic thin films; 0.18 mum; 40 A; CVD Cu; Cu; Cu electroplating; back-end Cu metallization; low via contact resistance; plug-fill application; process integration; seed layer; step coverage; Adhesives; Atherosclerosis; Conductivity; Contact resistance; Etching; Filling; Inorganic materials; Metallization; Research and development; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854276

Filename

854276