DocumentCode
2192085
Title
Extracting small-signal model parameters of silicon MOSFET transistors
Author
Lovelace, D. ; Costa, J. ; Camilleri, N.
Author_Institution
Motorola Inc., Mesa, AZ, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
865
Abstract
A novel approach to the extraction of small signal model parameters for silicon MOSFETs is described. This technique was developed to extract a high frequency model based only on S-parameter measurements to obtain both the intrinsic and parasitic resistance model parameter values of a small signal model.<>
Keywords
S-parameters; elemental semiconductors; equivalent circuits; insulated gate field effect transistors; semiconductor device models; silicon; solid-state microwave devices; MOSFET transistors; S-parameter measurements; Si; high frequency model; intrinsic resistance; parasitic resistance; small-signal model parameters; Electrical resistance measurement; Frequency measurement; MOSFET circuits; Scattering parameters; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335220
Filename
335220
Link To Document