Title :
The characterization of trimethylsilane based PE-CVD α-SiCO:H low-k films
Author :
Wang, Bor Kai ; Loboda, Mark J. ; Cerny, Glenn A. ; Schneider, Ryan F. ; Seifferly, Jeff A. ; Washer, Tom
Author_Institution :
Dow Corning Corp., Midland, MI, USA
Abstract :
The trimethylsilane (3MS) based low-k α-SiCO:H films can be made using 3MS, He and N2O in typical PECVD equipment. In this study, the structure, composition, and electrical characteristics of these films were evaluated with different process conditions. RBS and FTIR were evaluated to understand the composition and structure of films. The films have been characterized as-deposited and after annealing at 400°C to see the thermal stability. 3MS low-k α-SiCO:H films showed low bulk film density (1.14-1.34 g/cm3 ), low-k (2.6<k<3.2), low leakage current density (J<10 -10 A/cm2 at 1 MV/cm), and relatively high breakdown field (E>4 MV/cm at 1 mA/cm2)
Keywords :
Fourier transform spectra; Rutherford backscattering; annealing; hydrogen; infrared spectra; insulating thin films; permittivity; plasma CVD coatings; silicon compounds; thermal stability; 400 C; FTIR; RBS; SiCO:H; composition; electrical characteristics; high breakdown field; low bulk film density; low leakage current density; structure; thermal stability; trimethylsilane based PE-CVD α-SiCO:H low-k films; Annealing; Atomic layer deposition; Atomic measurements; Electric variables; Helium; Optical films; Plasma measurements; Plasma temperature; Semiconductor films; Semiconductor materials;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854279
