DocumentCode
2192205
Title
Effect of TiCl4 pre-treatment in PECVD-Ti process for sub-0.2 μm metal bit line contacts
Author
Kang, Sang Bom ; Moon, Kwang Jin ; Park, Hee Sook ; Lee, Myoung Bum ; Choi, Gil Heyun ; Park, Young Wook ; Lee, Sang In ; Lee, Moon Yong
Author_Institution
Semicond. R&D Center, Samsung Electron., Kyungki, South Korea
fYear
2000
fDate
2000
Firstpage
70
Lastpage
72
Abstract
The effect of the initial steps in PECVD-Ti process is investigated for the optimization of TiSix formation. A remarkable difference in TiSix formation is observed between pre-plasma and pre-TiCl4 treatment in which the initial steps start with H2 gas with plasma and TiCl4 gas without plasma. TiCl4 pre-treatment in the PECVD-Ti process is compared with H2 plasma pre-treatment especially for low aspect ratio contacts. PECVD-Ti films with H2 plasma pre-treatment results in accumulation of Cl impurities at the interface between Si and TiSix, and subsequently results in thinner TiSix and higher contact resistance. With the optimized TiCl 4 pretreatment, excellent electrical characteristics are obtained in sub-0.2 μm bit line contacts
Keywords
contact resistance; integrated circuit interconnections; metallic thin films; plasma CVD; plasma materials processing; titanium; 0.2 mum; Cl impurities; H2 plasma pre-treatment; PECVD; Ti; TiCl4 pre-treatment; contact resistance; low aspect ratio contact; metal bit line contacts; Contact resistance; Degradation; Fluid flow; Ignition; Plasmas; Radio frequency; Semiconductor films; Silicidation; Surface resistance; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location
Burlingame, CA
Print_ISBN
0-7803-6327-2
Type
conf
DOI
10.1109/IITC.2000.854285
Filename
854285
Link To Document