Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications

Author

Yota, J. ; Janani, M. ; Kar-Roy, Arjun ; Liu, Q.Z. ; Nguyen, Cam ; Hander, J. ; Van Cleemput, P. ; Chang, Wenge ; Chiou, W.C. ; Li, L.J. ; Chao, L.C. ; Jang, S.M. ; Yu, Cody Hao ; Liang, M.S.

Author_Institution

Adv. Process Technol., Conexant Syst., Newport Beach, CA

fYear

2000

fDate

2000

Firstpage

76

Lastpage

78

Abstract

High-density plasma CVD (HDP CVD) silicon nitride has been investigated for its use in advanced interconnect applications. Results show that the HDP film has many excellent film properties and has many advantages over the plasma-enhanced CVD (PECVD) silicon nitride film. The HDP film has a higher film density, much lower hydrogen content, in addition to lower polish, wet-etch, and dry-etch rates, than the PECVD film. Therefore, the HDP silicon nitride is suitable and ideal as CMP and etch stop layers, as hard mask, and as Copper diffusion and oxidation barriers in damascene architectures

Keywords

integrated circuit interconnections; plasma CVD coatings; silicon compounds; CMP stop layer; Cu; HDP CVD; PECVD; SiN; copper interconnect; damascene architecture; density; diffusion barrier; dry etching; etch stop layer; hard mask; hydrogen content; oxidation barrier; polishing; silicon nitride film; wet etching; Copper; Dielectrics; Etching; Hydrogen; Integrated circuit interconnections; Plasma applications; Plasma density; Plasma properties; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Conference_Location

Burlingame, CA

Print_ISBN

0-7803-6327-2

Type

conf

DOI

10.1109/IITC.2000.854287

Filename

854287