Title :
Comparison between HDP CVD and PECVD silicon nitride for advanced interconnect applications
Author :
Yota, J. ; Janani, M. ; Kar-Roy, Arjun ; Liu, Q.Z. ; Nguyen, Cam ; Hander, J. ; Van Cleemput, P. ; Chang, Wenge ; Chiou, W.C. ; Li, L.J. ; Chao, L.C. ; Jang, S.M. ; Yu, Cody Hao ; Liang, M.S.
Author_Institution :
Adv. Process Technol., Conexant Syst., Newport Beach, CA
Abstract :
High-density plasma CVD (HDP CVD) silicon nitride has been investigated for its use in advanced interconnect applications. Results show that the HDP film has many excellent film properties and has many advantages over the plasma-enhanced CVD (PECVD) silicon nitride film. The HDP film has a higher film density, much lower hydrogen content, in addition to lower polish, wet-etch, and dry-etch rates, than the PECVD film. Therefore, the HDP silicon nitride is suitable and ideal as CMP and etch stop layers, as hard mask, and as Copper diffusion and oxidation barriers in damascene architectures
Keywords :
integrated circuit interconnections; plasma CVD coatings; silicon compounds; CMP stop layer; Cu; HDP CVD; PECVD; SiN; copper interconnect; damascene architecture; density; diffusion barrier; dry etching; etch stop layer; hard mask; hydrogen content; oxidation barrier; polishing; silicon nitride film; wet etching; Copper; Dielectrics; Etching; Hydrogen; Integrated circuit interconnections; Plasma applications; Plasma density; Plasma properties; Semiconductor films; Silicon;
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
DOI :
10.1109/IITC.2000.854287
