Title :
Efficient integrated DC-DC power converters - Advanced technologies and new challenges
Author :
Shenai, K. ; Bernstein, Gary H. ; Wu, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
Abstract :
Advanced circuit component, packaging, and thermal management technologies are critically evaluated for developing efficient integrated DC-DC power converters; and, important challenges and potential limitations are identified. It is shown that heterogeneous chip-scale integration of GaN power FETs, silicon CMOS control, integrated power inductors, and microchip capacitors using the new high-density, low-loss Quilt Packaging™ (QP) promises efficiency performance breakthroughs never seen before with integrated silicon DC-DC power converter chips. Thermal constraints arising from the heating of GaN power FETs and integrated chip-scale power inductors not only require advanced cooling, but also will ultimately limit the scalability, performance, and reliability of this important emerging technology.
Keywords :
CMOS integrated circuits; DC-DC power convertors; III-V semiconductors; capacitors; gallium compounds; power MOSFET; power field effect transistors; silicon; thermal management (packaging); wide band gap semiconductors; GaN; advanced circuit component; chip-scale power inductors; integrated DC-DC power converters; integrated power inductors; low-loss quilt packaging; microchip capacitors; power FET; silicon CMOS control; thermal management technology; CMOS integrated circuits; Gallium nitride; ISO standards; Insulation; Magnetic flux; Skin; Switches; “Quilt” packaging; DC-DC converter; efficiency; gallium nitride; microchip capacitor; power FET; power inductor; reliability; silicon CMOS; thermal management;
Conference_Titel :
Energytech, 2011 IEEE
Conference_Location :
Cleveland, OH
Print_ISBN :
978-1-4577-0777-3
Electronic_ISBN :
978-1-4577-0775-9
DOI :
10.1109/EnergyTech.2011.5948531
