A novel microstrip MEMS bandpass filter on silicon substrate

A microwave bandpass MEMS filter on silicon substrate was designed and simulated in this letter. Induced coupling plasma (ICP) deep etching technology is done to get vertical via holes on the high resistivity silicon substrate. A stepped impedance resonator (SIR) structure was selected in design. The simulated and optimized results show excellent performances such as small size, low return loss, and far parasitic passband characteristic. The filter was designed with a center frequency of 11.5 GHz, an insertion loss of 0.8 dB, relative bandwidth of 19.1%. The size of this filter is 11.5 mm × 4 mm × 0.4 mm.