A novel microstrip MEMS bandpass filter on silicon substrate

Author

Yuan, Yan ; Xu, Jun ; Xu, Yanqing ; Zhang, Xiaochuan

Author_Institution

Inst. of Appl. Phys., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

1850

Lastpage

1852

Abstract

A microwave bandpass MEMS filter on silicon substrate was designed and simulated in this letter. Induced coupling plasma (ICP) deep etching technology is done to get vertical via holes on the high resistivity silicon substrate. A stepped impedance resonator (SIR) structure was selected in design. The simulated and optimized results show excellent performances such as small size, low return loss, and far parasitic passband characteristic. The filter was designed with a center frequency of 11.5 GHz, an insertion loss of 0.8 dB, relative bandwidth of 19.1%. The size of this filter is 11.5 mm × 4 mm × 0.4 mm.

Keywords

band-pass filters; elemental semiconductors; micromechanical devices; microstrip filters; microwave filters; silicon; sputter etching; Si; frequency 11.5 GHz; high resistivity silicon substrate; induced coupling plasma deep etching technology; insertion loss; novel microstrip MEMS bandpass filter; parasitic passband characteristic; stepped impedance resonator structure; vertical via holes; Band pass filters; Micromechanical devices; Microwave filters; Resonator filters; Silicon; Substrates; MEMS bandpass filter; SIR structure; microstrip; silicon substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Zhejiang

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6067593

Filename

6067593